Light emitting device, method of manufacturing the same, light emitting device package, and lighting system

ABSTRACT

Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a conductive support member, a light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the conductive support member, and an electrode on the light emitting structure layer. The conductive support member has a curved lateral surface recessed inward.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Divisional Application of prior U.S. patentapplication Ser. No. 12/796,780 filed Jun. 9, 2010, which claimspriority under 35 U.S.C. §119 to Korean Application No. 10-2009-051249filed on Jun. 10, 2009, whose entire disclosures are hereby incorporatedby reference.

BACKGROUND

Groups III-V nitride semiconductors have been extensively used as mainmaterials for light emitting devices, such as a light emitting diode(LED) or a laser diode (LD), due to the physical and chemicalcharacteristics thereof. In general, the groups III-V nitridesemiconductors include a semiconductor material having a compositionalformula of In_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1, and 0≦x+y≦1).

The LED is a semiconductor device, which transmits/receives signals byconverting an electric signal into infrared ray or light using thecharacteristics of compound semiconductors. The LED is also used as alight source.

The LED or the LD using the nitride semiconductor material is mainlyused for the light emitting device to provide the light. For instance,the LED or the LD is used as a light source for various products, suchas a keypad light emitting part of a cellular phone, an electricsignboard, and a lighting device.

SUMMARY

The embodiment provides a light emitting device having a novelstructure, a method of manufacturing the same, a light emitting devicepackage, and a lighting system.

The embodiment provides a light emitting device, a method ofmanufacturing the same, a light emitting device package, and a lightingsystem, capable of improving a yield rate by performing an etchingprocess after a laser scribing process has been carried out.

According to the embodiment, a light emitting device includes aconductive support member, a light emitting structure layer including afirst conductive semiconductor layer, an active layer, and a secondconductive semiconductor layer on the conductive support member, and anelectrode on the light emitting structure layer. The conductive supportmember has a curved lateral surface recessed inward.

A light emitting device package includes a package body, first andsecond electrode layers on the package body, a light emitting devicemounted on the package body and electrically connected to a firstelectrode layer and a second electrode layer, and a molding membersurrounding the light emitting device. The light emitting deviceincludes a conductive support member, a light emitting structure layer,which includes a first conductive semiconductor layer, an active layer,and a second conductive semiconductor layer on the conductive supportmember, and an electrode on the light emitting structure layer. Theconductive support member has a curved lateral surface recessed inward.

According to the embodiment, a lighting system includes a substrate, anda light emitting device mounted on the substrate. The light emittingdevice includes a conductive support member, a light emitting structurelayer, which includes a first conductive semiconductor layer, an activelayer, and a second conductive semiconductor layer on the conductivesupport member, and an electrode on the light emitting structure layer.The conductive support member has a curved lateral surface recessedinward.

According to the embodiment, a method of manufacturing a light emittingdevice includes forming a light emitting structure layer, which includesa first conductive semiconductor layer, an active layer, and a secondconductive semiconductor layer, on a growth substrate, selectivelyforming a protective layer on the light emitting structure layer,forming a conductive support member on the light emitting structurelayer and the protective layer, removing the growth substrate from thelight emitting structure layer, forming a chip boundary region byperforming an isolation etching with respect to the light emittingstructure layer such that the light emitting structure layer is dividedinto a plurality of chip units, forming a separating section, by whichthe conductive support is divided into separate portions, by performinga laser scribing process with respect to the chip boundary region whilepassing through the conductive support member, performing an etchingprocess with respect to the separating section, and dividing the lightemitting structure layer and the conductive support member in a chipunit by breaking the conductive support member.

The embodiment can provide a light emitting device having a novelstructure, a method of manufacturing the same, a light emitting devicepackage, and a lighting system.

The embodiment can provide a light emitting device, a method ofmanufacturing the same, a light emitting device package, and a lightingsystem, capable of improving a yield rate by performing an etchingprocess after a laser scribing process has been carried out.

BRIEF DESCRIPTION OF THF DRAWINGS

FIGS. 1 to 11 are sectional views showing a light emitting device and amethod of manufacturing the same according to the embodiment;

FIG. 12 is a view showing a light emitting device package including alight emitting device according to embodiments;

FIG. 13 is a view showing a backlight unit including a light emittingdevice or a light emitting device package according to the embodiment;and

FIG. 14 is a lighting system including a light emitting device or alight emitting device package according to the embodiment.

DETAILED DESCRIPTION

Hereinafter, the embodiment will be described with reference toaccompanying drawings. In the description of the embodiments, theconcept of the term “on each layer” or “under each layer” will bedescribed with reference to accompanying drawings. Meanwhile, it will beunderstood that, when a layer (or film), a region, a pattern, or astructure is referred to as being “on” or “under” another substrate,another layer (or film), another region, another pad, or anotherpattern, it can be “directly” or “indirectly” on the other substrate,layer (or film), region, pad, or pattern, or one or more interveninglayers may also be present. Such a position of the layer has beendescribed with reference to the drawings.

FIGS. 1 to 11 are sectional views showing a light emitting device and amethod of manufacturing the same according to the embodiment.

Referring to FIG. 1, a light emitting structure layer 135 is formed on agrowth substrate 101. The light emitting structure layer 135 includes afirst conductive semiconductor layer 110, an active layer 120 on thefirst conductive semiconductor layer 110, and a second conductivesemiconductor layer 130 on the active layer 120.

The growth substrate 101 may include one of sapphire (Al₂O₃), GaN, SiC,ZnO, Si, GaP, InP, or GaAs. A buffer layer and/or an undopedsemiconductor layer may be formed on the growth substrate 101.

The light emitting structure layer 135 may include a GaN-basedsemiconductor layer. The light emitting structure layer 135 may includeat least one of GaN, InGaN, AlGaN, or InAlGaN.

The first conductive semiconductor layer 110 may include an N-typesemiconductor layer. The first conductive semiconductor layer 110 mayinclude a semiconductor material having a composition formula ofIn_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1). For example, the firstconductive semiconductor layer 110 may include InAlGaN, GaN, AlGaN,AlInN, InGaN, AlN, or InN. The first conductive semiconductor layer 110may be doped with N-type dopants such as Si, Ge, and Sn.

Electrons (or holes) injected through the first conductive semiconductorlayer 110 meet holes (or electrons) injected through the secondconductive semiconductor layer 130 at the active layer 120, so that theactive layer 120 emits the light based on the band gap difference of theenergy band according to material of the active layer 120.

The active layer 120 may have one of a single quantum structure, amulti-quantum well structure, a quantum dot structure, and a quantumwire structure, but the embodiment is not limited thereto.

The active layer 120 may include a semiconductor material having acomposition formula of In_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1).If the active layer 120 is formed in the MQW structure, the active layer120 may have a stack structure of plural well layers and plural barrierlayers. For instance, the active layer 120 may have a stack structure ofan InGaN well layer/a GaN barrier layer.

A clad layer (not shown) doped with n-type dopants or p-type dopants maybe formed above and/or below the active layer 120, and may include anAlGaN layer or an InAlGaN layer.

For example, the second conductive semiconductor layer 130 may include aP-type semiconductor layer. The second conductive semiconductor layer130 may include a semiconductor material having a composition formula ofIn_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1). For example, the secondconductive semiconductor layer 130 may include InAlGaN, GaN, AlGaN,InGaN, AlInN, AlN, or InN. The second conductive semiconductor layer 130may include P-type dopants such as Mg, Zn, Ca, Sr, and Ba.

Meanwhile, the first conductive semiconductor layer 110 may include aP-type semiconductor layer, and the second conductive semiconductorlayer 130 may include an N-type semiconductor layer. A third conductivesemiconductor layer (not shown) including an N-type semiconductor layeror a P-type semiconductor layer may be formed on the second conductivesemiconductor layer 130. Accordingly, the light emitting structure layer135 may have at least one of NP, PN, NPN, or PNP junction structures.The doping density of dopants of the first and second conductivesemiconductor layers 110 and 130 may be regular or irregular. In otherwords, the light emitting structure layer 135 may have variousstructures, but the embodiment is not limited thereto.

The light emitting structure layer 135 including the first conductivesemiconductor layer 110, the active layer 120, and the second conductivesemiconductor layer 130 may have variously modified structures. In otherwords, the light emitting structure layer 135 is not limited to theabove structure according to the embodiment.

In a method of manufacturing the light emitting device according to theembodiment, a plurality of light emitting device chips may be providedtogether. Hereinafter, only regions corresponding to first and secondchips will be described for the purpose of explanation.

Referring to FIG. 2, protective layer 140 is selectively formed on thesecond conductive semiconductor layer 130.

For example, the protective layer 140 may be selectively formed on thesecond conductive semiconductor layer 130 along outer peripheralportions of the first and second chip regions.

The protective layer 140 may include an insulating material or amaterial that does not generate fragments in an isolation etchingprocess. For example, the protective layer 140 may include at least oneof SiO₂, SiO_(x), Si_(x)N_(y), Al₂O₃, TiO₂, ITO, IZO, or AZO. Theprotective layer 140 can prevent the light emitting structure layer 135from being electrically shorted in the isolation etching process.

Referring to FIG. 3, a contact layer 150 is formed on the secondconductive semiconductor layer 130. In addition, the contact layer 150may be formed on the protective layer 140.

The contact layer 150 may include at least one of Al, Ag, Pd, Rh, or Pt,or the alloy thereof. In addition, the contact layer 150 may include amaterial having an ohmic contact property or high reflection efficiency.

Referring to FIG. 4, a conductive support member 160 is formed on thecontact layer 150.

The conductive support member 160 may include at least one of copper(Cu), titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum(Pt), gold (Au), molybdenum (Mo), and a carrier wafer including Si, Ge,GaAs, ZnO, SiGe, GaN, or Ga₂O₃. The conductive support member 160 servesas a base substrate. For example, the conductive support member 160 maybe formed through a plating process or a bonding process. The thicknessof the conductive support member 160 may be in the range of about 10 μmto about 500 μm.

The conductive support member 160 supports the light emitting structurelayer 135.

The contact layer 150 and the conductive support member 160 may beformed as one layer. For example, the contact layer 150 and theconductive support member 160 may be prepared as a support member havinghigh reflectance, but the embodiment is not limited thereto.

Referring to FIG. 5, the growth substrate 101 is removed. The growthsubstrate 101 may be removed through a laser lift off (LLO) scheme or achemical lift off (CLO) scheme.

According to the LLO scheme, a laser beam having a predeterminedwavelength band is irradiated into the growth substrate 101 to separatethe growth substrate 101. In addition, if another semiconductor layer(e.g., buffer layer) is formed between the growth substrate 101 and thefirst conductive semiconductor layer 110, the CLO scheme may be employedto remove the buffer layer using wet etchant.

Then, a surface of the first conductive semiconductor layer 110 withoutthe growth substrate 101 may be polished through a polisher.

For reference, the structure of FIG. 5 is obtained by reversing thestructure of FIG. 4.

Referring to FIG. 6, an isolation etching process is performed withrespect to the light emitting structure layer 135 to selectively removethe light emitting structure layer 135, so that a chip boundary region105 is formed. The light emitting structure layer 135 is divided into aplurality of chip units by the chip boundary region 105. For example,the light emitting structure layer 135 may be divided into first andsecond chips. The isolation etching process may be performed in the chipboundary region 105 such that the protective layer 140 may be exposed,but the embodiment is not limited thereto.

In addition, an electrode 171 may be formed in a predetermined patternon the first conductive semiconductor layer 110.

Referring to FIG. 7, a first chip protective layer 180 may be formed onthe light emitting structure layer 135 and the protective layer 140, anda first support layer 190 may be formed under the conductive supportmember 160.

The first chip protective layer 180 prevents the light emittingstructure layer 135 from being damaged when the LLO process is performedto form an individual chip. The first support layer 190 supports thelight emitting structure layer 135 and the conductive support member 160when the LLO process is performed.

The first chip protective layer 180 and the first support layer 190 maybe omitted or added if necessary. For example, a chip protective layermay be additionally interposed between the conductive support member 160and the first support layer 190.

The first chip protective layer 180 may include a photoresist layer, butthe embodiment is not limited thereto.

The first support layer 190 may be provided in the form of an adhesivesheet such as a UV sheet or a blue sheet, having an adhesion property,but the embodiment is not limited thereto.

Referring to FIG. 8, a laser scribing process is performed along thechip boundary region 105 through the first chip protective layer 180,the protective layer 140, the contact layer 150, and the conductivesupport member 160, thereby forming a separating section 200 to separatechip regions from each other in a chip unit. As shown in FIG. 8, theseparating section 200 may be formed to separate the first and secondchips from each other.

In this case, the separating section 200 partially separates the firstand second chips from each other. Although the conductive support member160 is melted during the laser scribing process, the melted conductivesupport member 160 is cured to form a re-combination section 165 afterthe laser scribing process has been finished.

The re-combination section 165 partially connects the conductive supportmembers 160 to each other, and the thickness of the re-combinationsection 165 is increased as the thickness of the conductive supportmember 160 is increased.

The first chip protective layer 180 and the first support layer 190 maybe removed after the laser scribing process.

Referring to FIG. 9, an etching process is performed with respect to theseparating section 200 to remove at least a portion of there-combination section 165, so that a sub-re-combination section 165 aremains as shown in FIG. 9.

The etching process may include wet etching employing a chemicalsolution as etchant, and dry etching employing gas as etchant.

FIG. 9 shows a case in which the wet etching is used. When the wetetching is performed, an etch profile of the separating section 200,that is, a lateral surface 168 of the conductive support member 160becomes a curved surface recessed inward. This is because the wetetching can be performed as isotropic etching having no specificorientation.

The etch profile, that is, the lateral surface 168 of the conductivesupport member 160 is more recessed as the contact with the etchant isincreased. For example, when the etching process is performed from a topsurface of the conductive support member 160, the lateral surface 168 ofthe conductive support member 160 is recessed at an upper portion morethan at a lower portion.

If dry etching is performed, etching can be achieved with a uniformorientation. Accordingly, different from the wet etching, the conductivesupport member 160 may not have the curved lateral surface 168 recessedinward. However, the dry etching may be slowly performed.

Referring to FIG. 10, a second support layer 210 may be formed under theconductive support member 160.

The second support layer 210 may be provided in the form of an adhesivesheet, such as a UV sheet or a blue sheet, having an adhesion property,but the embodiment is not limited thereto.

When the light emitting device is divided into separate portions in achip unit through a breaking process that will be described later, thesecond support layer 210 fixes the separate portions of the lightemitting device such that the separate portions of the light emittingdevice are not scattered.

Meanwhile, a second protective layer (not shown) is formed on the lightemitting structure layer 135 and the electrode 171, thereby protectingthe light emitting device in the following breaking process.

Referring to FIGS. 10 and 11, the breaking process is performed withrespect to the separating section 200 to separate a plurality of chipsfrom each other in a chip unit. As shown in FIGS. 10 and 11, the firstand second chips are separated from each other through the breakingprocess.

According to the breaking process, the re-combination section 165 of theseparating section 200 is cut by using a cutter, so that the first andsecond chips are completely separated from each other in a chip unit.

However, since the breaking process employs the cutter, cracks may occurin the light emitting device when the re-combination section 165 of theseparating section 200 is cut.

In particular, as described above, the thickness of the re-combinationsection 165 becomes increased as the thickness of the conductive supportmember 160 is increased. Accordingly, if the breaking process isdirectly performed with respect to the separating section 200 withoutthe etching process according to the embodiment, the probability of thefailure of the light emitting device resulting from cracks is increasedas the thickness of the re-combination section 165 is increased.

For example, if the thickness of the conductive support member 160 isabout 75 μm, the yield rate in the manufacturing process of the lightemitting device is in the range of about 70% to about 80%. However, ifthe thickness of the conductive support member 160 exceeds 150 μm, theyield rate in the manufacturing process of the light emitting deviceapproximates 0%.

However, since an etching process is performed with respect to theseparating section 200 to remove at least a portion of there-combination section 165, the thickness of the re-combination section165 is reduced, so that defects caused by the breaking process can belowered, and the yield rate in the manufacturing process of the lightemitting device can be improved.

In particular, the etching process according to the embodiment may beperformed when the thickness of the conductive support member 160 is inthe range of about 75 μm to about 500 μm. Even if the conductive supportmember 160 has a thick thickness, the yield rate in the manufacturingprocess of the light emitting device can be improved.

In other words, according to the embodiment, the thickness of theconductive support member 160 may be in the range of about 75 μm toabout 500 μm.

The second support layer 210 and the second chip protective layer (notshown) may be removed after the breaking process has been performed.

Therefore, the light emitting device according to the embodiment can beprovided.

The light emitting device according to the embodiment includes theconductive support member 160, the light emitting structure layer 135 onthe conductive support member 160, and the electrode 171 on the lightemitting structure layer 135.

A portion of the protective layer 140 may be provided between theconductive support member 160 and the light emitting structure layer135, and the portion of the protective layer 140 may be exposedupwardly.

A contact layer 150 may be interposed between the light emittingstructure layer 135 and the conductive support member 160, and may besimultaneously interposed between the protective layer 140 and theconductive support member 160.

The conductive support member 160 may have the curved lateral surface168 recessed inward. The lateral surface 168 of the conductive supportmember 160 may vertically overlap with the protective layer 140.

FIG. 12 is a sectional view showing a light emitting device package 600having the light emitting device according to the embodiments.

Referring to FIG. 12, the light emitting device package 600 according tothe embodiment includes a package body 300, first and second electrodelayers 310 and 320 formed on the package body 300, the light emittingdevice 200 provided on the package body 300 and electrically connectedto the first and second electrode layers 31 and 32 and a molding member500 that surrounds the light emitting device 200.

The package body 300 may include one of silicon, synthetic resin ormetallic material. An inclined surface may be formed around the lightemitting device 200.

The first and second electrode layers 310 and 320 are electricallyisolated from each other to supply power to the light emitting device200. In addition, the first and second electrode layers 310 and 320reflect the light emitted from the light emitting device 200 to improvethe light efficiency and dissipate heat generated from the lightemitting device 200 to the outside.

The light emitting device 200 can be installed on the package body 300or the first and second electrode layers 310 and 320.

The light emitting device 200 is electrically connected to the first andsecond electrode layers 310 and 320 through a wire 400.

The molding member 500 surrounds the light emitting device 200 toprotect the light emitting device 200. In addition, the molding member500 may include phosphors to change the wavelength of the light emittedfrom the light emitting device 200.

Since the light emitting device package 600 according to the embodimentincludes the light emitting device 200 in which the damage of a lightemitting structure layer is less, the light emitting device package 600may represent superior light emission efficiency.

A plurality of the light emitting device packages 600 according to theembodiment are arrayed on a substrate, and a light guide plate, a prismsheet, a diffusion sheet, and a fluorescent sheet, which are opticalmembers, may be provided on a path of light emitted from the lightemitting device packaae 600. The light emitting device package, thesubstrate, and the optical members constitute a backlight unit or alighting unit. For example, a lighting system may include the backlightunit, the lighting unit, an indicator, a lamp, and a street lamp.

FIG. 13 is an exploded perspective view showing a backlight unit 1100including the light emitting device or the light emitting device packageaccording to the embodiment. The backlight unit 1100 shown in FIG. 13 isan example of a lighting system, but the embodiment is not limitedthereto.

Referring to FIG. 13, the backlight unit 1100 includes a bottom frame1140, a light guide member 1120 installed in the bottom frame 1140, anda light emitting module 1110 installed at one lateral surface or on thebottom surface of the light guide frame 1120. In addition, a reflectivesheet 1130 is disposed under the light guide member 1120

The bottom frame 1140 has a box shape having a top surface being open toreceive the light guide member 1120, the light emitting module 1110 andthe reflective sheet 1130 therein. In addition, the bottom frame mayinclude metallic material or resin material, but the embodiment is notlimited thereto.

The light emitting module 1110 may include a substrate 700 and aplurality of light emitting device packages 600 installed on thesubstrate 700. The light emitting device packages 600 provide the lightto the light guide member 1120. According to the embodiment, althoughthe light emitting module 1110 includes the light emitting devicepackage 600 provided on the substrate 700, the light emitting device 200according to the embodiment may be directly installed in the lightemitting module 1110.

As shown in FIG. 13, the light emitting module 1110 is installed on atleast one inner side of the bottom frame 1140 to provide the light to atleast one side of the light guide member 1120.

In addition, the light emitting module 1110 can be provided below thebottom frame 1140 to provide the light toward the bottom surface of thelight guide member 1120. Such an arrangement can be variously changedaccording to the design of the backlight unit 1100, but the embodimentis not limited thereto.

The light guide member 1120 may be installed in the bottom frame 1140.The light guide member 1120 converts the light emitted from the lightemitting module 1110 into the surface light to guide the surface lighttoward a display panel (not shown).

The light guide member 1120 may include a light guide plate. Forinstance, the light guide plate may include one selected from the groupconsisting of acryl-based resin, such as PMMA (polymethyl methacrylate),PET (polyethylene terephthalate), PC (polycarbonate), COC or PEN(polyethylene naphthalate) resin.

An optical sheet 1150 may be provided over the light guide member 1120.

The optical sheet 1150 may include at least one of a diffusion sheet, alight collection sheet, a brightness enhancement sheet, and afluorescent sheet. For instance, the optical sheet 1150 may have a stackstructure of the diffusion sheet, the light collection sheet, thebrightness enhancement sheet, and the fluorescent sheet. In this case,the diffusion sheet uniformly diffuses the light emitted from the lightemitting module 1110 such that the diffused light can be collected on adisplay panel (not shown) by the light collection sheet. The lightoutput from the light collection sheet is randomly polarized and thebrightness enhancement sheet increases the degree of polarization of thelight output from the light collection sheet. The light collection sheetmay include a horizontal and/or vertical prism sheet. In addition, thebrightness enhancement sheet may include a dual brightness enhancementfilm and the fluorescent sheet may include a transmissive plate or atransmissive film including phosphors.

The reflective sheet 1130 may be disposed below the light guide member1120. The reflective sheet 1130 reflects the light, which is emittedthrough the bottom surface of the light guide member 1120, toward thelight exit surface of the light guide member 1120.

The reflective sheet 1130 may include resin material having highreflectivity, such as PET, PC or PVC resin, but the embodiment is notlimited thereto.

FIG. 14 is a perspective view showing a lighting unit 1200 including alight emitting device or a light emitting device package according tothe embodiment. The illumination unit 1200 shown in FIG. 14 is anexample of a lighting system, but the embodiment is not limited thereto.

Referring to FIG. 14, the lighting unit 1200 includes a case body 1210,a light emitting module 1230 installed in the case body 1210, and aconnection terminal 1220 installed in the case body 1210 to receivepower from an external power source.

Preferably, the case body 1210 includes material having superior heatdissipation property. For instance, the case body 1210 includes metallicmaterial or resin material.

The light emitting module 1230 may include a substrate 700 and at leastone light emitting device package 600 installed on the substrate 700.According to the embodiment, although the light emitting module 1110according to the embodiment includes the light emitting device package600 provided on the substrate 700, the light emitting device 200 may bedirectly installed in the light emitting module 1110.

The substrate 700 includes an insulating member printed with a circuitpattern. For instance, the substrate 300 includes a PCB (printed circuitboard), an MC (metal core) PCB, an F (flexible) PCB, or a ceramic PCB.

In addition, the substrate 700 may include material that effectivelyreflects the light. The surface of the substrate 300 can be coated witha color, such as a white color or a silver color, to effectively reflectthe light.

At least one light emitting device package 600 according to theembodiment can be installed on the substrate 700. Each light emittingdevice package 600 may include at least one LED (light emitting diode).The LED may include a colored LED that emits the light having the colorof red, green, blue or white and a UV (ultraviolet) LED that emits UVlight.

The LEDs of the light emitting module 1230 can be variously arranged toprovide various colors and brightness. For instance, the combination ofthe white LED, the red LED and the green LED can be arranged to achievethe high color rendering index (CRI). In addition, a fluorescent sheetmay further be provided in the path of the light emitted from the lightemitting module 1230 to change the wavelength of the light emitted fromthe light emitting module 1230. For instance, if the light emitted fromthe light emitting module 1230 has a wavelength band of blue light, thefluorescent sheet may include yellow phosphors. In this case, the lightemitted from the light emitting module 1230 passes through thefluorescent sheet so that the light is viewed as white light.

The connection terminal 1220 is electrically connected to the lightemitting module 1230 to supply power to the light emitting module 1230.Referring to FIG. 14, the connection terminal 1220 has a shape of asocket screw-coupled with the external power source, but the embodimentis not limited thereto. For instance, the connection terminal 1220 canbe prepared in the form of a pin inserted into the external power sourceor connected to the external power source through a wire.

According to the lighting system as mentioned above, at least one of thelight guide member, the diffusion sheet, the light collection sheet, thebrightness enhancement sheet and the fluorescent sheet is provided inthe path of the light emitted from the light emitting module, so thatthe desired optical effect can be achieved.

Any reference in this specification to “one embodiment,” “anembodiment,” “example embodiment,” etc., means that a particularfeature, structure, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention. Theappearances of such phrases in various places in the specification arenot necessarily all referring to the same embodiment. Further, when aparticular feature, structure, or characteristic is described inconnection with any embodiment, it is submitted that it is within thepurview of one skilled in the art to effect such feature, structure, orcharacteristic in connection with other ones of the embodiments.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

1. A method of manufacturing a semiconductor light emitting device, themethod comprising: forming a light emitting structure; selectivelyforming a light emitting region protective layer under the lightemitting structure; forming an electrode layer under the light emittingstructure and the light emitting region protective layer; forming aconductive support member under the electrode layer; forming a chipboundary region among a plurality of chips by mesa-etching the lightemitting structure; forming a first boundary which groups the chips intochip units along the chip boundary region and extends by passing throughthe conductive support member; performing an etching process on thefirst boundary; and performing a breaking process to separate the chipsinto the chip units.
 2. The method as claimed in claim 1, wherein thelight emitting region protective layer is selectively formed under thelight emitting structure along an outer peripheral portion of each chip.3. The method as claimed in claim 1, wherein the conductive supportmember has a thickness of about 10 μm to about 500 μm.
 4. The method asclaimed in claim 1, further comprising forming at least one of a firstsupport layer and a first chip protective layer under the conductivesupport member after forming the chip boundary region.
 5. The method asclaimed in claim 1, further comprising forming a second support layer ona bottom surface of the conductive support member after performing anetching process on the first boundary.
 6. The method as claimed in claim5, further comprising forming a second chip protective layer on thelight emitting structure.
 7. The method as claimed in claim 1, whereinthe light emitting structure is formed on a substrate, and the substrateis removed after the conductive support member is formed under theelectrode layer.
 8. The method as claimed in claim 1, wherein the firstboundary is formed through laser irradiation.
 9. The method as claimedin claim 1, wherein the etching process includes a wet etching processor a dry etching process.
 10. The method as claimed in claim 9, wherein,when the wet etching process is performed, a curved surface, which isrecessed inward, is formed on a lateral side of the conductive supportmember.